D.L. Kencke: search on Z-Library

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1

[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Random charge effects for PMOS NBTI in ultra-small gate area devices

Agostinelli, M., Pae, S., Yang, W., Prasad, C., Kencke, D., Ramey, S., Snyder, E., Kashyap, S., Jones, M.

Year:

2005

Language:

english

File:

PDF, 578 KB

english, 2005

2

Book Reviews

Journal:

Discourse & Society

Year:

1998

File:

PDF, 240 KB

1998

3

[IEEE 1997 55th Annual Device Research Conference Digest - Fort Collins, CO, USA (23-25 June 1997)] 1997 55th Annual Device Research Conference Digest - Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology

Liu, K.C., Ray, S.K., Oswal, S.K., Chakraborti, N.B., Chang, R.D., Kencke, D.L., Banerjee, S.K.

Year:

1997

Language:

english

File:

PDF, 196 KB

english, 1997

4

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - A sixteen level scheme enabling 64 Mbit flash memory using 16 Mbit technology

Kencke, D.L., Richart, R., Garg, S., Banerjee, S.K.

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

5

[IEEE 1999 57th Annual Device Research Conference Digest - Santa Barbara, CA, USA (28-30 June 1999)] 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) - Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETs

Kencke, D.L., Chen, W., Wang, H., Mudanai, S., Ouyang, Q., Tasch, A., Banerjee, S.K.

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

6

Tinkering with the well-tempered MOSFET: source–channel barrier modulation with high-permittivity dielectrics

D.L. Kencke, Q. Ouyang, W. Chen, H. Wang, S. Mudanai, A. Tasch, S.K. Banerjee

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 406 KB

english, 2000

7

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

Qiqing Ouyang, Xiangdong Chen, Mudanai, S.P., Xin Wang, Kencke, D.L., Tasch, A.F., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

8

The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

Reifenberg, J.P., Kencke, D.L., Goodson, K.E.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 261 KB

english, 2008

9

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Integration of Back-Gate doping for 15-nm node floating body cell (FBC) memory

Ban, Ibrahim, Avci, Uygar E., Kencke, David L., Tolchinsky, Peter, Chang, Peter L.D.

Year:

2010

Language:

english

File:

PDF, 424 KB

english, 2010

10

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Future high density memories for computing applications: Device behavior and modeling challenges

Spadini, Gianpaolo, Karpov, Ilya V., Kencke, David L.

Year:

2010

Language:

english

File:

PDF, 659 KB

english, 2010

11

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Floating Body Cell with Independently-Controlled Double Gates for High Density Memory

Ban, Ibrahim, Avci, Uygar E., Shah, Uday, Barns, Chris E., Kencke, David L., Chang, Peter

Year:

2006

Language:

english

File:

PDF, 388 KB

english, 2006

12

[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Flash ETOX virtual ground architecture: a future scaling direction

Koval, R., Bhachawat, V., Chang, C., Hajra, M., Kencke, D., Kim, Y., Kuo, C., Parent, T., Wei, M., Woo, B.J., Fazio, A.

Year:

2005

Language:

english

File:

PDF, 526 KB

english, 2005

13

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - A scaled floating body cell (FBC) memory with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond

Ban, Ibrahim, Avci, Uygar E., Kencke, David L., Chang, Peter L.D.

Year:

2008

Language:

english

File:

PDF, 319 KB

english, 2008

14

SPIE Proceedings [SPIE Optical Science and Technology, the SPIE 49th Annual Meeting - Denver, CO (Monday 2 August 2004)] Infrared Detector Materials and Devices - High-speed CMOS-compatible photodetectors for optical interconnects

Reshotko, Miriam R., Kencke, David L., Block, Bruce, Longshore, Randolph E., Sivananthan, Sivalingam

Year:

2004

Language:

english

File:

PDF, 555 KB

english, 2004

15

Duplication of an approximately 1.5 Mb DNA segment at chromosome 5q22 indicates the locus of a new tumour gene in nonpapillary renal cell carcinomas

Kenck, Chistiane, Bugert, Peter, Wilhelm, Monica, Kovacs, Gyula

Journal:

Year:

1997

Language:

english

File:

PDF, 502 KB

english, 1997

16

Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

Karpov, Ilya V., Kencke, David, Kau, Derchang, Tang, Stephen, Spadini, Gianpalo

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 948 KB

english, 2010

17

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - The Role of Interfaces in Damascene Phase-Change Memory

Kencke, David L., Karpov, Ilya V., Johnson, Brian G., Lee, Sean Jong, Kau, DerChang, Hudgens, Stephen J., Reifenberg, John P., Savransky, Semyon D., Zhang, Jingyan, Giles, Martin D., Spadini, Gianpaol

Year:

2007

Language:

english

File:

PDF, 3.67 MB

english, 2007

18

A multilevel approach toward quadrupling the density of flash memory

Kencke, D.L., Richart, R., Shyam Garg,, Banerjee, S.K.

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

19

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Enhanced secondary electron injection in novel SiGe flash memory devices

Kencke, D.L., Xin Wang,, Ouyang, Q., Mudanai, S., Tasch, A., Banerjee, S.K.

Year:

2000

Language:

english

File:

PDF, 319 KB

english, 2000

20

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory

Kencke, D.L., Wang, X., Wang, H., Ouyang, Q., Jallepalli, S., Rashed, M., Maziar, C., Tasch, A., Banerjee, S.K.

Year:

1998

Language:

english

File:

PDF, 447 KB

english, 1998

21

Significance of chromosome arm 14q loss in nonpapillary renal cell carcinomas

Jutta Herbers, Dietlinde Schullerus, Harald Müller, Christiane Kenck, Jerzy Chudek, Jörg Weimer, Peter Bugert, Gyula Kovacs

Journal:

Genes, Chromosomes and Cancer

Year:

1997

Language:

english

File:

PDF, 107 KB

english, 1997

22

Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions

Volvach, I., Alzate, J. G., Chen, Y.-J., Smith, A. J., Kencke, D. L., Lomakin, V.

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 2.66 MB

2020

23

Monte Carlo simulation of electron transport in simple orthorhombically strained silicon

Wang, Xin, Kencke, D. L., Liu, K. C., Tasch, A. F., Register, L. F., Banerjee, S. K.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 520 KB

english, 2000

24

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - A novel sidewall strained-Si channel nMOSFET

Liu, K.C., Wang, X., Quinones, E., Chen, X., Chen, X.D., Kencke, D., Anantharam, B., Chang, R.D., Ray, S.K., Oswal, S.K., Tu, C.Y., Banerjee, S.K.

Year:

1999

Language:

english

File:

PDF, 296 KB

english, 1999

25

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Substrate-current-induced hot electron (SCIHE) injection: a new convergence scheme for flash memory

Hu, C.-Y., Kencke, D.L., Banerjee, S.K., Richart, R., Bandyopadhyay, B., Moore, B., Ibok, E., Garg, S.

Year:

1995

Language:

english

File:

PDF, 415 KB

english, 1995

26

[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - Bandgap engineering in deep submicron vertical pMOSFETs

Ouyang, Q., Chen, X.D., Mudanai, S., Kencke, D.L., Tasch, A.F., Banerjee, S.K.

Year:

2000

Language:

english

File:

PDF, 175 KB

english, 2000

27

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, California, United States (Saturday 22 January 2005)] Optoelectronic Integration on Silicon II - Challenges for on-chip optical interconnects

Cadien, Kenneth C., Kubby, Joel A., Jabbour, Ghassan E., Reshotko, Miriam R., Block, Bruce A., Bowen, Audrey M., Kencke, David L., Davids, Paul

Year:

2005

Language:

english

File:

PDF, 569 KB

english, 2005

28

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX

Avci, U.E., Ban, I., Kencke, D.L., Chang, P.L.D.

Year:

2008

Language:

english

File:

PDF, 178 KB

english, 2008

29

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Electron transport properties in novel orthorhombically-strained silicon material explored by the Monte Carlo method

Xin Wang,, Kencke, D.L., Liu, K.C., Tasch, A.F., Register, L.F., Banerjee, S.K.

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

30

MUTATION OF THEVHL GENE IS ASSOCIATED EXCLUSIVELY WITH THE DEVELOPMENT OF NON-PAPILLARY RENAL CELL CARCINOMAS

KENCK, CHRISTIANE, WILHELM, MÓNICA, BUGERT, PETER, STAEHLER, GERD, KOVACS, GYULA

Journal:

The Journal of Pathology

Year:

1996

Language:

english

File:

PDF, 478 KB

english, 1996

31

Floating-Body Diode—A Novel DRAM Device

Avci, U.E., Kencke, D.L., Chang, P.L.D.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 443 KB

english, 2012

32

Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in accumulation mode

Hu, C.-Y., Kencke, D. L., Banerjee, S., Bandyopadhyay, B., Ibok, E., Garg, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 348 KB

english, 1995

33

Refining a proximal breakpoint cluster at chromosome 3p11.2 in non-papillary renal cell carcinomas

Peter Bugert, Christiane Kenck, Mónica Wilhelm, Gyula Kovacs

Journal:

International Journal of Cancer

Year:

1996

Language:

english

File:

PDF, 525 KB

english, 1996

34

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Write error rate in spin-transfer-torque random access memory including micromagnetic effects

Roy, Urmimala, Kencke, David L., Pramanik, Tanmoy, Register, Leonard F., Banerjee, Sanjay K.

Year:

2015

Language:

english

File:

PDF, 334 KB

english, 2015

35

Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang, D.L. Kencke, K.C. Liu, L.F. Register, S.K. Banerjee

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

36

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability

Ouyang, Q., Chen, X.D., Mudanai, S., Kencke, D.L., Wang, X., Tasch, A.F., Register, L.F., Banerjee, S.K.

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

37

A Proposed Four-Factor Model for Assessing Probability of Capture of Unowned Resource Opportunities

Kenck, Anthony, Wright, Mal, Alvarez Lopez, Jaime, Coulom, Steve, Jonas, Todd, Simon, Melina, Temple, John, Williams, Bennett, Otzmann, Terri

Journal:

SPE Economics & Management

Year:

2013

Language:

english

File:

PDF, 285 KB

english, 2013

38

A 33 bp minisatellite repeat upstream of the ‘mutated in colon cancer’ gene at chromosome 5q21

Dr. Peter Bugert, Christiane Kenck, Gyula Kovacs

Journal:

ELECTROPHORESIS

Year:

1998

Language:

english

File:

PDF, 460 KB

english, 1998

39

A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection

C. Hu, D. Kencke, S. Banerjee, R. Richart, B. Bandyopadhyay, B. Moore, E. Ibok, S. Garg

Journal:

IEEE Electron Device Letters

Year:

1995

Language:

english

File:

PDF, 308 KB

english, 1995

40

[IEEE 1999 57th Annual Device Research Conference Digest - Santa Barbara, CA, USA (28-30 June 1999)] 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) - A novel sidewall strained-Si channel nMOSFET

Liu, K.C., Wang, X., Quinones, E., Chen, X., Chen, X.D., Kencke, D., Anantharam, B., Ray, S.K., Oswal, S.K., Banerjee, S.K.

Year:

1999

Language:

english

File:

PDF, 191 KB

english, 1999

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